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TDA1908 8W AUDIO AMPLIFIER DESCRIPTION The TDA1908 is a monolithic integrated circuit in 12 lead quad in-line plastic package intended for low frequency power applications. The mounting is compatible with the old types TBA800, TBA810S, TCA830S and TCA940N. Its main features are: - flexibility in use with a max output curent of 3A and an operating supply voltage range of 4V to 30V; - protection against chip overtemperature; - soft limiting in saturation conditions; - low "switch-on" noise; - low number of external components; - high supply voltage rejection; - very low noise. ABSOLUTE MAXIMUM RATINGS Symbol Vs Io Io Ptot Tstg, Tj Supply voltage Output peak current (non repetitive) Output peak current (repetitive) Power dissipation: at Tamb = 80C at Tamb = 90C Storage and junction temperature Parameter Value 30 3.5 3 1 5 -40 to 150 Unit V A A W W C Findip ORDERING NUMBER : TDA1908 APPLICATION CIRCUIT March 1993 1/12 TDA1908 PIN CONNECTION (top view) SCHEMATIC DIAGRAM 2/12 TDA1908 TEST CIRCUIT * See fig. 12 THERMAL DATA Symbol Rth j-tab Rth j-amb Thermal resistance junction-tab Thermal resistance junction-ambient Parameter max max Value 12 () 70 Unit C/W C/W () Obtained with tabs soltered to printed circuit board with min copper area. ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = 25 C, Rth (heatsink)= 8 C/W, unless otherwise specified) Symbol Vs Vo Parameter Supply voltage Quiescent output voltage Vs = 4V Vs = 18V Vs = 30V Vs = 4V Vs = 18V Vs = 30V IC = 1A IC = 2.5A Po Output power d = 10% Vs Vs Vs Vs Vs f = 1KHz = 9V RL = 4 = 14V RL = 4 = 18V RL = 4 = 22V RL = 8 = 24V RL = 16 Test conditions Min. 4 1.6 8.2 14.4 2.1 9.2 15.5 15 17.5 21 0.5 V 1.3 2.5 5.5 9 8 5.3 Typ. Max. 30 2.5 10.2 16.8 Unit V V Id Quiescent drain current mA 35 VCEsat Output stage saturation voltage (each output transistor) 7 6.5 4.5 W 3/12 TDA1908 ELECTRICAL CHARACTERISTICS (continued) Symbol d Parameter Harmonic distorsion Test conditions f = 1KHz Vs = 9V R L = 4 Po = 50 mW to 1.5 W Vs = 18V R L = 4 Po = 50 mW to 4W Vs = 24V R L = 16 Po = 50 mW to 3W Vs Vs Vs Vs Vs Vs Vs Vs Vs = 9V = 14V = 18V = 22V = 24V = 9V = 14V = 18V = 24V RL RL RL RL RL = 4 = 4 = 4 = 8 = 16 Po = Po = Po = Po = Po = 2.5W 5.5W 9W 8W 5.3W 0.8 1.3 1.8 2.4 60 RL RL RL RL = 4 = 4 = 8 = 16 100 Min. Typ. Max. Unit 0.1 % 0.1 0.1 37 52 64 90 110 Vi Input sensivity mV Vi Input saturation voltage (rms) V Ri Is Input resistence (pin 8) Drain current f = 1 KHz f = 1 KHz Vs = 14V Vs = 18V Vs = 22V Vs = 24V K Po = Po = Po = Po = 5.5W 9W 8W 5.3W 570 730 500 310 72 40 to 40 000 75 mA BW Gv Gv eN Efficiency Small signal bandwitdth (-3 dB) Voltage gain (open loop) Voltage gain (closed loop) Total input noise Vs = 18V f = 1 KHz RL = 4 Po = 9W Vs = 18V f = 1 KHz Vs = 18V f = 1 KHz RL = 4 Po = 1W Rg = 50 Rg = 1K Rg = 10K Rg = 50 Rg = 1K Rg = 10K Rg = 10K Rg = 0 Rg = 10K Rg = 0 () () 40 39.5 RL = 4 Po = 1W % Hz dB 40.5 dB 40 1.2 1.3 1.5 2.0 2.0 2.2 92 94 88 90 50 145 () 4.0 V () S/N Signal to noise ratio Vs = 18V Po = 9W RL = 4 V 6.0 dB dB dB EC SVR Tsd Supply voltage rejection Termal shut-down junction temperature RL = 4 Vs = 18V fripple = 100 Hz Rg = 10K (*) Note : () Weighting filter = curve A. ( ) Filter with noise bandwidth: 22 Hz to 22 KHz. 4/12 TDA1908 Figure 1. Quiescent output voltage vs. supply voltage Figure 2. Quiescent drain current vs. supply voltage Figure 3. Output power vs. supply voltage Fi gur e 4 . Di stor tion v s. output power (RL = 16) Fi gur e 5 . Disto rtion vs . output power (RL = 8) Fi gur e 6 . Disto rtion vs . output power (RL = 4) Fi g ure 7. Distortion v s. frequency (RL = 16) Fi gur e 8 . Disto rtion vs . frequency (RL = 8) Fi gur e 9 . Disto rtion vs . frequency (RL = 4) 5/12 TDA1908 F i gu r e 1 0. Op en loo p frequency response Figure 11. Output power vs. input voltage Figure 12. Values of capacitor CX versus gain and BW Figure 13. Supply voltage rejection vs. voltage gain Figure 14. Supply voltage rej e c ti on v s . so urc e resistance Fi g ur e 1 5 . Max p owe r di s si pa ti on v s. sup ply voltage Figure 16. Power dissipation and efficiency vs. output power (Vs = 14V) Figure 17. Power dissipation and efficiencyvs. output power (Vs = 18V) Figure 18. Power dissipation and efficiency vs. output power (Vs = 24V) 6/12 TDA1908 APPLICATION INFORMATION Figure 19. Application circuit with bootstrap * R4 is necessary when Vs is less than 10V. Figure 20. P.C. board and component lay-out of the circuit of fig. 19 (1 : 1 scale) 7/12 TDA1908 APPLICATION INFORMATION (continued) Figure 22. Output power vs. supply voltage (circuit of fig. 21) Figure 21. Application circuit without bootstrap Figure 23. Position control for car headlights 8/12 TDA1908 APPLICATION SUGGESTION The recommended values of the external components are those shown on the application circuit of fig. 19. When the supply voltage Vs is less than 10V, a 100 resistor must be connected between pin 1 and pin 4 in order to obtain the maximum output power. Different values can be used. The following table can help the designer. Component Raccom. value 10 K Purpose Larger than raccomanded value Increase of gain. Smaller than raccomanded value Decrease of gain. Increase quiescent current. Increase of gain. Allowed range Min. 9 R2 Max. R1 Close loop gain setting Close loop gain setting. Frequency stability R2 R3 100 1 Decrease of gain. Danger of oscillation at hight frequencies with inductive loads. R1/9 R4 C1 100 2.2 F Increaseing of output swing with low Vs. Input DC decoupling. Supply voltage bypass. Inverting input DC decoupling. Ripple Rejection. Increase of the switch-on noise Increase of SVR. Increase of the switch-on time. Lower noise. Higher low frequency cutoff. Higher noise. Danger of oscillations. Higher low frequency cutoff. Degradation of SVR. Increase of the distorsion at low frequency Danger of oscillation. Higher low frequency cutoff. 47 0.1 F 330 C2 C3 C4 0,1 F 2.2 F 10 F 0.1F 2.2 F 100 F C5 47 F Bootstrap 10 mF 100 F C6 C7 0.22 F 1000 F Frequency stability. Output DC decoupling. 9/12 TDA1908 THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1) An overload on the output (even if it is permanent), or an abovelimit ambienttemperature can be easily supported since the Tj cannot be higher than 150C. 2) The heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no possibility of device damage due to high junction temperature. If, for any reason, the junction temperature increase up to 150C, the thermal shut-down simply reduces the power dissipation and the current consumption. The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its thermal resistance); fig. 25 shows the dissipable power as a function of ambient temperature for different thermal resistance. Figure 24. Output power and drain current vs. case temperature Figure 25. Output power and drain current vs. case temperature Fi g ur e 2 6. Max i mum power dissipation vs. ambient temperature MOUNTING INSTRUCTIONS The thermal power dissipated in the circuit may be removed by soldering the tabs to a copper area on the PC board (see Fig. 27). During soldering, tab temperature must not exceed 260C and the soldering time must not be longer than 12 seconds. Figure 27. Mounding example Fi gu re 2 8. Max imu m power dissipation and thermal resistance vs. side " " 10/12 TDA1908 FINDIP PACKAGE MEHANICAL DATA DIM. A a1 b b1 c c1 D E E1 E2 e e3 e4 e5 e6 F F1 G I K L M 7.8 6.1 2.5 2.5 7.27 12.35 6.3 6.1 9.8 8.6 6.5 2.9 3.1 0.307 0.240 0.098 0.098 19.2 16.8 4.86 10.11 2.29 17.43 2.54 17.78 7.62 7.62 12.7 7.97 13.05 7.1 6.7 0.286 0.486 0.248 0.240 0.386 0.339 0.256 0.114 0.122 17.2 mm MIN. 3.8 1.5 0.55 0.3 1.32 0.94 19.9 17.6 5.56 10.81 2.79 18.13 0.756 0.661 0.191 0.398 0.090 0.686 0.100 0.700 0.300 0.300 0.500 0.314 0.514 0.280 0.264 0.677 TYP. MAX. 4.05 1.75 0.6 0.35 MIN. 0.150 0.059 0.022 0.012 0.052 0.037 0.783 0.693 0.219 0.426 0.110 0.714 inch TYP. MAX. 0.159 0.069 0.024 0.014 G K e4 A a1 I M b c c1 e5 e6 e3 D D1 L e E1 E2 E b1 12 7 F1 F 1 6 FINDIP 11/12 TDA1908 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 12/12 |
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